Vishay SISH Type P-Channel MOSFET, 34.4 A, 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 139,16

(exc. VAT)

R 160,03

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 13.916R 139.16
50 - 90R 13.568R 135.68
100 - 240R 13.161R 131.61
250 - 990R 12.635R 126.35
1000 +R 12.13R 121.30

*price indicative

Packaging Options:
RS stock no.:
279-9984
Mfr. Part No.:
SISH107DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

34.4A

Maximum Drain Source Voltage Vds

30V

Package Type

1212-8

Series

SISH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.014Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

26.5W

Typical Gate Charge Qg @ Vgs

41nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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