Vishay SIRS Type P-Channel MOSFET, 227 A, 30 V Enhancement, 8-Pin SO-8 SIRS4301DP-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 94 989,00

(exc. VAT)

R 109 236,00

(inc. VAT)

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Per Reel*
3000 +R 31.663R 94,989.00

*price indicative

RS stock no.:
279-9959
Mfr. Part No.:
SIRS4301DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

227A

Maximum Drain Source Voltage Vds

30V

Series

SIRS

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0015Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

132W

Typical Gate Charge Qg @ Vgs

548nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Enhance power dissipation and lower RthJC

Fully lead (Pb)-free device

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