Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3

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Subtotal (1 pack of 2 units)*

R 124,18

(exc. VAT)

R 142,80

(inc. VAT)

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  • 5,990 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 48R 62.09R 124.18
50 - 98R 60.54R 121.08
100 - 248R 58.725R 117.45
250 - 998R 56.375R 112.75
1000 +R 54.12R 108.24

*price indicative

Packaging Options:
RS stock no.:
279-9963
Mfr. Part No.:
SIRS4302DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

478A

Maximum Drain Source Voltage Vds

30V

Series

SIRS

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00057Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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