Vishay Type P-Channel MOSFET, 65.7 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3
- RS stock no.:
- 252-0271
- Mfr. Part No.:
- SIR1309DP-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 147,77
(exc. VAT)
R 169,94
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 5,710 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 14.777 | R 147.77 |
| 50 - 90 | R 14.408 | R 144.08 |
| 100 - 240 | R 13.976 | R 139.76 |
| 250 - 990 | R 13.417 | R 134.17 |
| 1000 + | R 12.88 | R 128.80 |
*price indicative
- RS stock no.:
- 252-0271
- Mfr. Part No.:
- SIR1309DP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 65.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 65.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.
TrenchFET Gen IV p-channel power MOSFET
100% Rg tested
Related links
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3
- Vishay SiSS05DN Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSH101DN Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS73DN Type P-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Si7121DN Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212