Vishay SIRS Type P-Channel MOSFET, 198 A, 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3
- RS stock no.:
- 279-9967
- Mfr. Part No.:
- SIRS4401DP-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 149,82
(exc. VAT)
R 172,30
(inc. VAT)
Add 22 units to get free delivery
In Stock
- Plus 5,998 unit(s) shipping from 19 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 74.91 | R 149.82 |
| 50 - 98 | R 73.035 | R 146.07 |
| 100 - 248 | R 70.845 | R 141.69 |
| 250 - 998 | R 68.01 | R 136.02 |
| 1000 + | R 65.29 | R 130.58 |
*price indicative
- RS stock no.:
- 279-9967
- Mfr. Part No.:
- SIRS4401DP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 198A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SIRS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0022Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 588nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 198A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SIRS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0022Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 588nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
New generation power MOSFET
100 percent Rg and UIS tested
Ultra low RDS x Qg FOM product
Fully lead (Pb)-free device
Related links
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