Vishay SiR Type P-Channel MOSFET, 105 A, 20 V Enhancement, 8-Pin SO-8 SIR5211DP-T1-GE3

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Subtotal (1 pack of 5 units)*

R 89,85

(exc. VAT)

R 103,35

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 17.97R 89.85
50 - 95R 17.52R 87.60
100 - 245R 16.994R 84.97
250 - 995R 16.314R 81.57
1000 +R 15.662R 78.31

*price indicative

Packaging Options:
RS stock no.:
279-9949
Mfr. Part No.:
SIR5211DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

20V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0062Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

56.8W

Typical Gate Charge Qg @ Vgs

158nC

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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