Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 4 units)*

R 182,432

(exc. VAT)

R 209,796

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
4 - 56R 45.608R 182.43
60 - 96R 44.468R 177.87
100 - 236R 43.133R 172.53
240 - 996R 41.408R 165.63
1000 +R 39.75R 159.00

*price indicative

Packaging Options:
RS stock no.:
279-9944
Mfr. Part No.:
SIR5110DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

47.6A

Maximum Drain Source Voltage Vds

100V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0125Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

59.5W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links