Vishay SiR Type P-Channel MOSFET, 37.1 A, 60 V Enhancement, 8-Pin SO-8 SIR5623DP-T1-RE3

Image representative of range

View all MOSFETs

Subtotal (1 reel of 3000 units)*

R 42 153,00

(exc. VAT)

R 48 477,00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +R 14.051R 42,153.00

*price indicative

RS stock no.:
279-9952
Mfr. Part No.:
SIR5623DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

37.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.024Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

59.5W

Typical Gate Charge Qg @ Vgs

33nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

Related links