Vishay SiR Type P-Channel MOSFET, 60.6 A, 40 V Enhancement, 8-Pin SO-8 SIR4409DP-T1-RE3
- RS stock no.:
- 279-9940
- Mfr. Part No.:
- SIR4409DP-T1-RE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 162,26
(exc. VAT)
R 186,60
(inc. VAT)
Add 50 units to get free delivery
In Stock
- 5,700 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 32.452 | R 162.26 |
| 50 - 95 | R 31.64 | R 158.20 |
| 100 - 245 | R 30.69 | R 153.45 |
| 250 - 995 | R 29.462 | R 147.31 |
| 1000 + | R 28.284 | R 141.42 |
*price indicative
- RS stock no.:
- 279-9940
- Mfr. Part No.:
- SIR4409DP-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SiR | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 126nC | |
| Maximum Power Dissipation Pd | 59.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SiR | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 126nC | ||
Maximum Power Dissipation Pd 59.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
New generation power MOSFET
100 percent Rg and UIS tested
Ultra low RDS x Qg FOM product
Fully lead (Pb)-free device
Related links
- Vishay SiR Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIR4409DP-T1-RE3
- Vishay SiR Type P-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SIR5623DP-T1-RE3
- Vishay SiR Type P-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3
- Vishay SiR Type P-Channel MOSFET 20 V Enhancement, 8-Pin SO-8 SIR5211DP-T1-GE3
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR5108DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3