Vishay SiR Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3

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Subtotal (1 pack of 2 units)*

R 120,17

(exc. VAT)

R 138,196

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 60.085R 120.17
50 - 98R 58.585R 117.17
100 - 248R 56.825R 113.65
250 - 998R 54.55R 109.10
1000 +R 52.37R 104.74

*price indicative

Packaging Options:
RS stock no.:
279-9951
Mfr. Part No.:
SIR5607DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

90.9A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.007Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

112nC

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Less voltage drop

Reduces conduction loss

Fully lead (Pb)-free device

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