Vishay SiR Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3

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Subtotal (1 pack of 2 units)*

R 125,44

(exc. VAT)

R 144,26

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 62.72R 125.44
50 - 98R 61.15R 122.30
100 - 248R 59.315R 118.63
250 - 998R 56.94R 113.88
1000 +R 54.66R 109.32

*price indicative

Packaging Options:
RS stock no.:
279-9951
Mfr. Part No.:
SIR5607DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

90.9A

Maximum Drain Source Voltage Vds

60V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.007Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

112nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Less voltage drop

Reduces conduction loss

Fully lead (Pb)-free device

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