Vishay SiR Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3

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Subtotal (1 pack of 2 units)*

R 122,00

(exc. VAT)

R 140,30

(inc. VAT)

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In Stock
  • 5,958 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 48R 61.00R 122.00
50 - 98R 59.475R 118.95
100 - 248R 57.69R 115.38
250 - 998R 55.38R 110.76
1000 +R 53.165R 106.33

*price indicative

Packaging Options:
RS stock no.:
279-9951
Mfr. Part No.:
SIR5607DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

90.9A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.007Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

112nC

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Less voltage drop

Reduces conduction loss

Fully lead (Pb)-free device

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