Vishay SiR Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin SO-8 SIR5108DP-T1-RE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

R 190,31

(exc. VAT)

R 218,855

(inc. VAT)

Add to Basket
Select or type quantity
Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45R 38.062R 190.31
50 - 95R 37.11R 185.55
100 - 245R 35.996R 179.98
250 - 995R 34.556R 172.78
1000 +R 33.174R 165.87

*price indicative

Packaging Options:
RS stock no.:
279-9942
Mfr. Part No.:
SIR5108DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55.9A

Maximum Drain Source Voltage Vds

100V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0105Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

65.7W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links