ROHM R6013VND3 NaN Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 R6013VND3TL1
- RS stock no.:
- 265-5415
- Mfr. Part No.:
- R6013VND3TL1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 185,26
(exc. VAT)
R 213,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,445 unit(s) shipping from 30 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 37.052 | R 185.26 |
| 50 - 95 | R 36.126 | R 180.63 |
| 100 - 245 | R 35.042 | R 175.21 |
| 250 - 995 | R 33.64 | R 168.20 |
| 1000 + | R 32.294 | R 161.47 |
*price indicative
- RS stock no.:
- 265-5415
- Mfr. Part No.:
- R6013VND3TL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | R6013VND3 NaN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 131W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS NaN | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series R6013VND3 NaN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 131W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS NaN | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
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