ROHM R6013VND3 NaN Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 R6013VND3TL1
- RS stock no.:
- 265-5415
- Mfr. Part No.:
- R6013VND3TL1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 223,83
(exc. VAT)
R 257,405
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,455 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 44.766 | R 223.83 |
| 50 - 95 | R 43.646 | R 218.23 |
| 100 - 245 | R 42.336 | R 211.68 |
| 250 - 995 | R 40.642 | R 203.21 |
| 1000 + | R 39.016 | R 195.08 |
*price indicative
- RS stock no.:
- 265-5415
- Mfr. Part No.:
- R6013VND3TL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | R6013VND3 NaN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 131W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS NaN | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series R6013VND3 NaN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 131W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS NaN | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
Related links
- ROHM N-Channel MOSFET 600 V, 3-Pin DPAK R6013VND3TL1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R180C7ATMA1
- STMicroelectronics M6 N-Channel MOSFET 600 V, 3-Pin DPAK STD18N60M6
- onsemi NTD N-Channel MOSFET + Diode 600 V, 3-Pin DPAK NTD280N60S5Z
- ROHM N-Channel MOSFET 600 V, 3-Pin DPAK R6004END3TL1
- ROHM N-Channel MOSFET 600 V, 3-Pin DPAK R6007END3TL1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R180C7ATMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R180C7XKSA1