STMicroelectronics STB N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263 STB18N60M6

Image representative of range

Bulk discount available
View bulk pricing options

Subtotal (1 pack of 5 units)*

R 281,15

(exc. VAT)

R 323,30

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Pack*
5 - 45R 56.23R 281.15
50 - 95R 54.824R 274.12
100 - 245R 53.18R 265.90
250 - 495R 51.052R 255.26
500 +R 49.01R 245.05

*price indicative

Packaging Options:
RS stock no.:
192-4936
Mfr. Part No.:
STB18N60M6
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

STB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

25V

Typical Gate Charge Qg @ Vgs

16.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.4mm

Height

4.37mm

Standards/Approvals

No

Width

9.35mm

Automotive Standard

No

COO (Country of Origin):
CN
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

Zener-protected

Related links