ROHM R6013VND3 NaN Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252
- RS stock no.:
- 265-5414
- Mfr. Part No.:
- R6013VND3TL1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 48 397,50
(exc. VAT)
R 55 657,50
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 19.359 | R 48,397.50 |
| 5000 + | R 18.875 | R 47,187.50 |
*price indicative
- RS stock no.:
- 265-5414
- Mfr. Part No.:
- R6013VND3TL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | R6013VND3 NaN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 131W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS NaN | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series R6013VND3 NaN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 131W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS NaN | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
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