Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1

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Subtotal (1 pack of 5 units)*

R 253,14

(exc. VAT)

R 291,11

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 50.628R 253.14
10 - 95R 49.362R 246.81
100 - 245R 47.882R 239.41
250 - 495R 45.966R 229.83
500 +R 44.128R 220.64

*price indicative

Packaging Options:
RS stock no.:
222-4902
Mfr. Part No.:
IPD60R180C7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Series

IPD50R

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

68W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Gate Source Voltage Vgs

20 V

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Enables increasing switching frequency without loss in efficiency

Measure showing key parameter for light load and full load efficiency

Doubling the switching frequency will half the size of magnetic components

Smaller packages for same R DS(on)

Can be used in many more positions for both hard and soft switching topologies

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