Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252
- RS stock no.:
- 222-4901
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 38 330,00
(exc. VAT)
R 44 080,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 05 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 15.332 | R 38,330.00 |
| 5000 - 5000 | R 14.949 | R 37,372.50 |
| 7500 + | R 14.50 | R 36,250.00 |
*price indicative
- RS stock no.:
- 222-4901
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | IPD50R | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series IPD50R | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Related links
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R180C7ATMA1
- ROHM N-Channel MOSFET 600 V, 3-Pin DPAK R6013VND3TL1
- STMicroelectronics M6 N-Channel MOSFET 600 V, 3-Pin DPAK STD18N60M6
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R180C7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R180C7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R180C7ATMA1
- onsemi NTD N-Channel MOSFET + Diode 600 V, 3-Pin DPAK NTD280N60S5Z
- STMicroelectronics MDmesh 13 A 3-Pin TO-220FP STP13NK60ZFP