Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 10-Pin TO-252
- RS stock no.:
- 222-4903
- Mfr. Part No.:
- IPDD60R190G7XTMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 1700 units)*
R 32 255,80
(exc. VAT)
R 37 094,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1700 - 1700 | R 18.974 | R 32,255.80 |
| 3400 - 3400 | R 18.50 | R 31,450.00 |
| 5100 + | R 17.945 | R 30,506.50 |
*price indicative
- RS stock no.:
- 222-4903
- Mfr. Part No.:
- IPDD60R190G7XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | IPD50R | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 21.11mm | |
| Width | 2.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series IPD50R | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 21.11mm | ||
Width 2.35 mm | ||
Automotive Standard No | ||
The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Related links
- Infineon CoolMOS™ G7 N-Channel MOSFET 600 V, 10-Pin DDPAK IPDD60R190G7XTMA1
- Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode 650 V, 10-Pin DDPAK IPDD60R080G7XTMA1
- Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode 650 V, 10-Pin DDPAK IPDD60R150G7XTMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R180C7ATMA1
- ROHM N-Channel MOSFET 600 V, 3-Pin DPAK R6013VND3TL1
- Infineon IPD N-Channel MOSFET 600 V, 10-Pin PG-HDSOP-10-1 IPDD60R180CM8XTMA1
- Infineon IPD N-Channel MOSFET 600 V, 10-Pin PG-HDSOP-10-1 IPDD60R037CM8XTMA1
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-220 STP18NM60N