onsemi NTD Type N-Channel MOSFET & Diode, 13 A, 600 V Enhancement, 3-Pin TO-252 NTD280N60S5Z
- RS stock no.:
- 220-565
- Mfr. Part No.:
- NTD280N60S5Z
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 5 units)*
R 304,83
(exc. VAT)
R 350,555
(inc. VAT)
Add 25 units to get free delivery
In Stock
- Plus 2,475 unit(s) shipping from 16 February 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 60.966 | R 304.83 |
| 50 - 95 | R 59.442 | R 297.21 |
| 100 - 495 | R 57.658 | R 288.29 |
| 500 - 995 | R 55.352 | R 276.76 |
| 1000 + | R 53.138 | R 265.69 |
*price indicative
- RS stock no.:
- 220-565
- Mfr. Part No.:
- NTD280N60S5Z
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | NTD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 224mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 17.9nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-Free, 100% Avalanche Tested | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series NTD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 224mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 17.9nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-Free, 100% Avalanche Tested | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use and EMI issues for both hard and soft switching topologies.
Halogen Free
RoHS Compliant
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