Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263 IRFZ34NSTRLPBF

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Subtotal (1 pack of 10 units)*

R 157,76

(exc. VAT)

R 181,42

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 15.776R 157.76
20 - 40R 15.382R 153.82
50 - 90R 14.921R 149.21
100 - 240R 14.324R 143.24
250 +R 13.751R 137.51

*price indicative

Packaging Options:
RS stock no.:
262-6784
Mfr. Part No.:
IRFZ34NSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-41-681

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

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