N-Channel MOSFET, 29 A, 55 V, 3-Pin TO-220AB Infineon IRFZ34NPBF

RS stock no.:: 919-4766
Mfr. Part No.:: IRFZ34NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 29 A, 55 V, 3-Pin TO-220AB Infineon IRFZ34NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

R 680 35

(exc. VAT)

R 782 40

(inc. VAT)

800 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

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Units	Per unit	Per Tube**
50 - 50	R 13,607	R 680,35
100 - 150	R 13,267	R 663,35
200 - 450	R 12,869	R 643,45
500 - 950	R 12,354	R 617,70
1000 +	R 11,86	R 593,00

**price indicative

RS stock no.:: 919-4766
Mfr. Part No.:: IRFZ34NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 29A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRFZ34NPBF

This MOSFET is tailored for advanced electronic applications, particularly where high efficiency and dependability are essential. Its N-channel configuration facilitates efficient switching and modulation of electrical currents in power systems. With a maximum drain-source voltage of 55V and a continuous drain current of 29A, this component is crucial for high-performance designs in the automation and electrical sectors.

Features & Benefits

• Ultra-low on-resistance for minimal power loss
• Maximum power dissipation of 68W for robust functionality
• High-temperature tolerance of up to 175°C ensures long-term performance
• Compatible with through-hole mounting for easy integration
• Dynamic dv/dt rating allows for fast switching applications
• Enhancement mode transistor improves device efficiency

Applications

• Utilised in power supply designs for effective energy management
• Employed in motor control for accurate speed regulation
• Suitable for discrete switching in consumer electronics
• Applied in industrial automation to enhance system dependability
• Appropriate for automotive requiring high power handling

What is the maximum continuous drain current at 100°C?

At 100°C, the continuous drain current is rated at 20A, ensuring dependability in high-temperature conditions.

How does the low on-resistance benefit circuit efficiency?

A low RDS(on) decreases power losses during operation, which increases overall circuit efficiency and minimises heat generation.

Can it be used for parallel configurations?

Yes, the design accommodates easy paralleling, enhancing current handling for high-power applications.

What are the implications of the maximum gate-source voltage?

The maximum gate-source voltage of ±20V ensures safe operation and protects against damage during standard switching activities.

What is the impact of temperature on performance?

With an operating temperature range from -55°C to +175°C, it maintains operational integrity in extreme conditions, making it suitable for a variety of applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	40 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	68 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	34 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	8.77mm