N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK Infineon IRF1010ZSTRLPBF

RS stock no.:: 915-4923
Mfr. Part No.:: IRF1010ZSTRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK Infineon IRF1010ZSTRLPBF

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)**

R 239 38

(exc. VAT)

R 275 29

(inc. VAT)

3160 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Pack**
10 - 40	R 23,938	R 239,38
50 - 240	R 23,34	R 233,40
250 - 490	R 22,64	R 226,40
500 - 1240	R 21,734	R 217,34
1250 +	R 20,865	R 208,65

**price indicative

RS stock no.:: 915-4923
Mfr. Part No.:: IRF1010ZSTRLPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZSTRLPBF

This surface mount MOSFET provides exceptional performance in various applications. Created by Infineon, it leverages advanced processing techniques to deliver low on-resistance and high current handling capabilities. Its effectiveness in high-temperature environments makes it an important component for professionals in automation, electronics, electrical, and mechanical sectors.

Features & Benefits

• High continuous drain current of 94A supports substantial load applications
• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency
• Maximum drain-source voltage of 55V enables design flexibility
• High reliability with a maximum operating temperature of 175°C
• Fast switching capabilities reduce delays in circuit response
• N-channel configuration is suitable for advanced electronic designs

Applications

• Utilised in power management and conversion systems
• Employed in motor control circuits for automation technologies
• Suitable for power supply designs demanding high efficiency
• Integral in electric vehicle power electronics
• Used in renewable energy systems for effective energy conversion

What are the implications of the low on-resistance feature?

The low on-resistance of 7.5mΩ ensures minimal heat generation during operation, leading to increased efficiency and reduced cooling requirements.

How does this MOSFET perform in high-temperature environments?

It supports maximum operating temperatures of up to 175°C, making it suitable for harsh conditions without compromising performance.

What type of mounting is required for this component?

This device is designed for surface mount applications, allowing compact layout and efficient thermal management on printed circuit boards.

Can it handle pulsed currents effectively?

Yes, it features a pulsed drain current rating of 360A, enabling it to manage transient conditions efficiently.

What characteristics should I consider for circuit compatibility?

Ensure that the gate threshold voltage ranges from 2V to 4V to ensure proper switching behaviour within your circuit design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	94 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	7.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	140 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Length	10.67mm
Typical Gate Charge @ Vgs	63 nC @ 10 V
Maximum Operating Temperature	+175 °C
Width	11.3mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C
Height	4.83mm