Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263

Image representative of range

Subtotal (1 reel of 800 units)*

R 9 195,20

(exc. VAT)

R 10 574,40

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +R 11.494R 9,195.20

*price indicative

RS stock no.:
262-6782
Mfr. Part No.:
IRFZ34NSTRLPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

Fully avalanche rated

Related links