Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263 IRF3805STRLPBF
- RS stock no.:
- 217-2598
- Mfr. Part No.:
- IRF3805STRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 336,44
(exc. VAT)
R 386,905
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,950 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 67.288 | R 336.44 |
| 10 - 95 | R 65.606 | R 328.03 |
| 100 - 245 | R 63.638 | R 318.19 |
| 250 - 495 | R 61.092 | R 305.46 |
| 500 + | R 58.648 | R 293.24 |
*price indicative
- RS stock no.:
- 217-2598
- Mfr. Part No.:
- IRF3805STRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRL3705ZSTRLPBF