Infineon HEXFET Type N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

R 20 876,00

(exc. VAT)

R 24 008,00

(inc. VAT)

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Per Reel*
4000 +R 5.219R 20,876.00

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RS stock no.:
262-6735
Mfr. Part No.:
IRF7465TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10nC

Maximum Operating Temperature

150°C

Height

1.75mm

Length

5mm

Width

4 mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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