Infineon HEXFET Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8
- RS stock no.:
- 273-2806
- Mfr. Part No.:
- IRF7351TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 96,77
(exc. VAT)
R 111,285
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 19.354 | R 96.77 |
| 50 - 95 | R 18.87 | R 94.35 |
| 100 - 495 | R 18.304 | R 91.52 |
| 500 - 1995 | R 17.572 | R 87.86 |
| 2000 + | R 16.87 | R 84.35 |
*price indicative
- RS stock no.:
- 273-2806
- Mfr. Part No.:
- IRF7351TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- PH
The Infineon MOSFET is a 60V N Channel HEXFET Power MOSFET. This MOSFET is used for low power motor drive systems and for isolated DC to DC converters.
Ultra low gate impedance
20V VGS maximum gate rating
Fully characterized avalanche voltage and current
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
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- Infineon HEXFET Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8