Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8

RS stock no.:: 220-7478
Mfr. Part No.:: IRF7490TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8

Image representative of range

Bulk discount available

Subtotal (1 reel of 4000 units)*

R 23 560,00

(exc. VAT)

R 27 080,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

8,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
4000 - 4000	R 5.89	R 23,560.00
8000 - 8000	R 5.742	R 22,968.00
12000 +	R 5.57	R 22,280.00

*price indicative

RS stock no.:: 220-7478
Mfr. Part No.:: IRF7490TRPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	5.4A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	39mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	37nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.5W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	4 mm
	Height	1.75mm
	Length	5mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 5.4A
	Maximum Drain Source Voltage Vds 100V
	Package Type SO-8
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 39mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 37nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.5W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 4 mm
	Height 1.75mm
	Length 5mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRF7490TRPBF

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Industry standard surface-mount power package

Capable of being wave-soldered

Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8

FREE delivery for orders over R 1,500.00

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