Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8 IRF7451TRPBF
- RS stock no.:
- 262-6734
- Mfr. Part No.:
- IRF7451TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 141,00
(exc. VAT)
R 162,20
(inc. VAT)
Add 120 units to get free delivery
In Stock
- 3,750 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 14.10 | R 141.00 |
| 50 - 90 | R 13.748 | R 137.48 |
| 100 - 490 | R 13.336 | R 133.36 |
| 500 - 1990 | R 12.803 | R 128.03 |
| 2000 + | R 12.291 | R 122.91 |
*price indicative
- RS stock no.:
- 262-6734
- Mfr. Part No.:
- IRF7451TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.75mm | ||
Width 4 mm | ||
Length 5mm | ||
Automotive Standard No | ||
The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.
Fully characterized avalanche voltage and current
Related links
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 IRLML0040TRPBF
- Infineon HEXFET Type P-Channel MOSFET -30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET -30 V Enhancement, 8-Pin SOIC IRF7606TRPBF
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- Infineon Isolated HEXFET 2 Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC IRF7380TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V PQFN