Infineon HEXFET N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8 IRF7465TRPBF

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Subtotal (1 pack of 25 units)*

R 333,45

(exc. VAT)

R 383,48

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25R 13.338R 333.45
50 - 75R 13.004R 325.10
100 - 475R 12.614R 315.35
500 - 1975R 12.11R 302.75
2000 +R 11.626R 290.65

*price indicative

Packaging Options:
RS stock no.:
262-6736
Distrelec Article No.:
304-41-668
Mfr. Part No.:
IRF7465TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Length

5mm

Height

1.75mm

Width

4mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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