Infineon HEXFET Type N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8 IRF7465TRPBF
- RS stock no.:
- 262-6736
- Mfr. Part No.:
- IRF7465TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 345,70
(exc. VAT)
R 397,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 7,975 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 13.828 | R 345.70 |
| 50 - 75 | R 13.482 | R 337.05 |
| 100 - 475 | R 13.078 | R 326.95 |
| 500 - 1975 | R 12.555 | R 313.88 |
| 2000 + | R 12.053 | R 301.33 |
*price indicative
- RS stock no.:
- 262-6736
- Mfr. Part No.:
- IRF7465TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Width | 4 mm | |
| Distrelec Product Id | 304-41-668 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Width 4 mm | ||
Distrelec Product Id 304-41-668 | ||
Automotive Standard No | ||
The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.
Fully characterized avalanche voltage and current
Related links
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 8-Pin SO-8 IRF7465TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 8-Pin SO-8 IRF7451TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 3-Pin IPAK IRFU4615PBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 30 V, 8-Pin SO-8 IRF7413ZTRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 30 V, 8-Pin SOIC IRF7503TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 IRF7473TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 40 V, 8-Pin PQFN 5 x 6 AUIRFN8459TR
- Infineon HEXFET Dual Silicon N-Channel MOSFET 55 V, 3-Pin TO-220 Full-Pak IRFIZ44NPBF