Infineon HEXFET Type N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8 IRF7465TRPBF
- RS stock no.:
- 262-6736
- Distrelec Article No.:
- 304-41-668
- Mfr. Part No.:
- IRF7465TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 336,20
(exc. VAT)
R 386,625
(inc. VAT)
Add 125 units to get free delivery
In Stock
- 7,975 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 13.448 | R 336.20 |
| 50 - 75 | R 13.112 | R 327.80 |
| 100 - 475 | R 12.719 | R 317.98 |
| 500 - 1975 | R 12.21 | R 305.25 |
| 2000 + | R 11.722 | R 293.05 |
*price indicative
- RS stock no.:
- 262-6736
- Distrelec Article No.:
- 304-41-668
- Mfr. Part No.:
- IRF7465TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Width 4 mm | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.
Fully characterized avalanche voltage and current
Related links
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