Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V TO-263 IRFZ48NSTRLPBF
- RS stock no.:
- 258-3990
- Distrelec Article No.:
- 304-40-547
- Mfr. Part No.:
- IRFZ48NSTRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 58,43
(exc. VAT)
R 67,194
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 29.215 | R 58.43 |
| 10 - 98 | R 28.485 | R 56.97 |
| 100 - 248 | R 27.63 | R 55.26 |
| 250 - 498 | R 26.525 | R 53.05 |
| 500 + | R 25.465 | R 50.93 |
*price indicative
- RS stock no.:
- 258-3990
- Distrelec Article No.:
- 304-40-547
- Mfr. Part No.:
- IRFZ48NSTRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 130W | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 130W | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Advanced Process Technology
Surface Mount
Low-profile through-hole
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Related links
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