Infineon HEXFET N-Channel MOSFET, 64 A, 55 V Enhancement, 3-Pin TO-220 IRFZ48NPBF
- RS stock no.:
- 540-9957
- Mfr. Part No.:
- IRFZ48NPBF
- Manufacturer:
- Infineon
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R 32,35
(exc. VAT)
R 37,20
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 24 | R 32.35 |
| 25 - 99 | R 31.54 |
| 100 - 249 | R 30.59 |
| 250 - 499 | R 29.37 |
| 500 + | R 28.20 |
*price indicative
- RS stock no.:
- 540-9957
- Mfr. Part No.:
- IRFZ48NPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 130W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Width | 4.69mm | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 130W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Width 4.69mm | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFZ48NPBF
This power MOSFET is suitable for high-efficiency applications, featuring robust performance and advanced processing methods. It provides a dependable option for a variety of electronic designs, especially in scenarios where power efficiency is essential.
Features & Benefits
• Supports continuous drain currents of up to 64A
• Utilises enhancement mode for improved switching characteristics
• Low RDS(on) of 14mΩ enhances efficiency
• Operates reliably within a temperature range of -55°C to +175°C
• Capable of handling gate-source voltages up to ±20V
• Fully avalanche rated for safety in transient conditions
Applications
• Driving inductive loads in automation systems
• Power management circuits in industrial equipment
• Automotive electrical systems and power converters
• DC-DC converters and power supplies
• Motor control requiring high efficiency
What is the maximum power dissipation capability?
The device can manage a maximum power dissipation of 130 W when adequately cooled, ensuring effective thermal management in high-load scenarios.
How does the operating temperature range affect performance?
The extensive operating temperature range of -55°C to +175°C allows the device to function reliably in a variety of environmental conditions.
Is this device compatible with standard PCB layouts?
Yes, it is available in a TO-220AB package, commonly used in industry for straightforward PCB mounting and efficient heat dissipation.
What applications benefit most from this component's fast switching speed?
Power MOSFETs with fast switching capabilities are ideal for applications such as switch mode power supplies and high-frequency converters, where low switching losses are crucial.
How should the device be handled during installation?
During installation, ensure proper mounting torque and avoid excessive soldering temperatures. It is recommended to adhere to standard safety guidelines to prevent damage.
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