N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220AB Infineon IRFZ48NPBF

RS stock no.:: 919-4797
Mfr. Part No.:: IRFZ48NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 64 A, 55 V, 3-Pin TO-220AB Infineon IRFZ48NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

R 843 55

(exc. VAT)

R 970 10

(inc. VAT)

1050 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Tube**
50 - 50	R 16,871	R 843,55
100 - 150	R 16,449	R 822,45
200 - 450	R 15,955	R 797,75
500 +	R 15,317	R 765,85

**price indicative

RS stock no.:: 919-4797
Mfr. Part No.:: IRFZ48NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFZ48NPBF

This power MOSFET is suitable for high-efficiency applications, featuring robust performance and advanced processing methods. It provides a dependable option for a variety of electronic designs, especially in scenarios where power efficiency is essential.

Features & Benefits

• Supports continuous drain currents of up to 64A
• Utilises enhancement mode for improved switching characteristics
• Low RDS(on) of 14mΩ enhances efficiency
• Operates reliably within a temperature range of -55°C to +175°C
• Capable of handling gate-source voltages up to ±20V
• Fully avalanche rated for safety in transient conditions

Applications

• Driving inductive loads in automation systems
• Power management circuits in industrial equipment
• Automotive electrical systems and power converters
• DC-DC converters and power supplies
• Motor control requiring high efficiency

What is the maximum power dissipation capability?

The device can manage a maximum power dissipation of 130 W when adequately cooled, ensuring effective thermal management in high-load scenarios.

How does the operating temperature range affect performance?

The extensive operating temperature range of -55°C to +175°C allows the device to function reliably in a variety of environmental conditions.

Is this device compatible with standard PCB layouts?

Yes, it is available in a TO-220AB package, commonly used in industry for straightforward PCB mounting and efficient heat dissipation.

What applications benefit most from this component's fast switching speed?

Power MOSFETs with fast switching capabilities are ideal for applications such as switch mode power supplies and high-frequency converters, where low switching losses are crucial.

How should the device be handled during installation?

During installation, ensure proper mounting torque and avoid excessive soldering temperatures. It is recommended to adhere to standard safety guidelines to prevent damage.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	64 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	10.54mm
Number of Elements per Chip	1
Width	4.69mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	81 nC @ 10 V
Height	8.77mm
Minimum Operating Temperature	-55 °C