Infineon HEXFET N-Channel MOSFET, 131 A, 55 V TO-263 IRF1405STRLPBF

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Subtotal (1 pack of 5 units)*

R 302,29

(exc. VAT)

R 347,635

(inc. VAT)

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  • 675 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 20R 60.458R 302.29
25 - 45R 58.946R 294.73
50 - 95R 57.178R 285.89
100 - 245R 54.89R 274.45
250 +R 52.694R 263.47

*price indicative

Packaging Options:
RS stock no.:
257-9276
Distrelec Article No.:
304-40-516
Mfr. Part No.:
IRF1405STRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

131A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

5.3mΩ

Maximum Power Dissipation Pd

200W

Typical Gate Charge Qg @ Vgs

170nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRF series is the 55V single n channel HEXFET power mosfet in a D2 Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

Capable of being wave soldered

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