Infineon IPD Type P-Channel MOSFET, -80 A, -30 V Enhancement, 3-Pin PG-TO-252 IPD80P03P4L07ATMA2

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

R 64,78

(exc. VAT)

R 74,50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,850 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8R 32.39R 64.78
10 - 98R 31.58R 63.16
100 - 248R 30.635R 61.27
250 - 498R 29.41R 58.82
500 +R 28.235R 56.47

*price indicative

Packaging Options:
RS stock no.:
258-3864
Mfr. Part No.:
IPD80P03P4L07ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-80A

Maximum Drain Source Voltage Vds

-30V

Package Type

PG-TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.3V

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

-0.31 V

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

Related links