Infineon IPD Type P-Channel MOSFET, -80 A, -30 V Enhancement, 3-Pin PG-TO-252 IPD80P03P4L07ATMA2
- RS stock no.:
- 258-3864
- Mfr. Part No.:
- IPD80P03P4L07ATMA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 70,95
(exc. VAT)
R 81,592
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,846 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 35.475 | R 70.95 |
| 10 - 98 | R 34.59 | R 69.18 |
| 100 - 248 | R 33.55 | R 67.10 |
| 250 - 498 | R 32.21 | R 64.42 |
| 500 + | R 30.92 | R 61.84 |
*price indicative
- RS stock no.:
- 258-3864
- Mfr. Part No.:
- IPD80P03P4L07ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -80A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -80A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
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