Infineon IPD Type P-Channel MOSFET, -50 A, -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- RS stock no.:
- 258-3842
- Mfr. Part No.:
- IPD50P03P4L11ATMA2
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 pack of 2 units)*
R 44,36
(exc. VAT)
R 51,02
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,428 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 22.18 | R 44.36 |
| 10 - 98 | R 21.625 | R 43.25 |
| 100 - 248 | R 20.975 | R 41.95 |
| 250 - 498 | R 20.135 | R 40.27 |
| 500 + | R 19.33 | R 38.66 |
*price indicative
- RS stock no.:
- 258-3842
- Mfr. Part No.:
- IPD50P03P4L11ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -50A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | IPD | |
| Package Type | PG-TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 58W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -50A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series IPD | ||
Package Type PG-TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 58W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Related links
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- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252