Infineon IPD Type P-Channel MOSFET, -50 A, -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2

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Subtotal (1 pack of 2 units)*

R 49,15

(exc. VAT)

R 56,522

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 24.575R 49.15
10 - 98R 23.96R 47.92
100 - 248R 23.24R 46.48
250 - 498R 22.31R 44.62
500 +R 21.42R 42.84

*price indicative

Packaging Options:
RS stock no.:
258-3842
Mfr. Part No.:
IPD50P03P4L11ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-50A

Maximum Drain Source Voltage Vds

-30V

Series

IPD

Package Type

PG-TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

10.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-0.31 V

Forward Voltage Vf

-1V

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

58W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

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