Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252

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Subtotal (1 reel of 2500 units)*

R 23 600,00

(exc. VAT)

R 27 150,00

(inc. VAT)

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  • Plus 2,500 unit(s) shipping from 02 June 2026
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Units
Per unit
Per Reel*
2500 - 2500R 9.44R 23,600.00
5000 - 5000R 9.204R 23,010.00
7500 +R 8.928R 22,320.00

*price indicative

RS stock no.:
258-3839
Mfr. Part No.:
IPD35N12S3L24ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

120V

Series

IPD

Package Type

PG-TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T power-transistor is power MOSFET for automotive applications. It has 175°C operating temperature.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

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