Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 40 197,50

(exc. VAT)

R 46 227,50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 16.079R 40,197.50
5000 - 5000R 15.677R 39,192.50
7500 +R 15.207R 38,017.50

*price indicative

RS stock no.:
258-3870
Mfr. Part No.:
IPD90P04P4L04ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-90A

Maximum Drain Source Voltage Vds

-40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1V

Maximum Gate Source Voltage Vgs

5 V

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

135nC

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.

P-channel - Logic Level - Enhancement mode

AEC qualified

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

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