Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252 IPD35N12S3L24ATMA1

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Subtotal (1 pack of 5 units)*

R 125,51

(exc. VAT)

R 144,335

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 25.102R 125.51
10 - 95R 24.474R 122.37
100 - 245R 23.74R 118.70
250 - 495R 22.79R 113.95
500 +R 21.878R 109.39

*price indicative

Packaging Options:
RS stock no.:
258-3840
Mfr. Part No.:
IPD35N12S3L24ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

120V

Series

IPD

Package Type

PG-TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T power-transistor is power MOSFET for automotive applications. It has 175°C operating temperature.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

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