Vishay TrenchFET Gen IV Type N-Channel MOSFET, 245 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ186E-T1_GE3
- RS stock no.:
- 252-0316
- Mfr. Part No.:
- SQJQ186E-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 126,37
(exc. VAT)
R 145,326
(inc. VAT)
FREE delivery for orders over R 1,500.00
Supply shortage
- Plus 1,844 left, shipping from 30 December 2025
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 63.185 | R 126.37 |
| 50 - 98 | R 61.605 | R 123.21 |
| 100 - 248 | R 59.755 | R 119.51 |
| 250 - 998 | R 57.365 | R 114.73 |
| 1000 + | R 55.07 | R 110.14 |
*price indicative
- RS stock no.:
- 252-0316
- Mfr. Part No.:
- SQJQ186E-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 245A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0014mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 4.9 mm | |
| Length | 6.15mm | |
| Height | 1.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 245A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0014mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Width 4.9 mm | ||
Length 6.15mm | ||
Height 1.9mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.9 mm height
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