Vishay TrenchFET Gen IV Type P-Channel MOSFET, 445 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ130EL-T1_GE3

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Subtotal (1 pack of 2 units)*

R 132,65

(exc. VAT)

R 152,548

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 66.325R 132.65
50 - 98R 64.665R 129.33
100 - 248R 62.725R 125.45
250 - 998R 60.215R 120.43
1000 +R 57.805R 115.61

*price indicative

Packaging Options:
RS stock no.:
239-8678
Mfr. Part No.:
SQJQ130EL-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

445A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET Gen IV

Package Type

PowerPAK (8x8L)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.00052Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

43nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

255W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

125°C

Height

1.6mm

Length

6.15mm

Width

4.9 mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

The Vishay SQJQ is automotive P-Channel MOSFET which operates at 30 V and 175 °C temperature. This MOSFET used for high power density.

Low resistance

AEC-Q101 qualified

UIS tested

Thin package

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