Infineon BSS Type P-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1

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Subtotal (1 pack of 10 units)*

R 27,98

(exc. VAT)

R 32,18

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 2.798R 27.98
20 - 90R 2.728R 27.28
100 - 240R 2.646R 26.46
250 - 490R 2.54R 25.40
500 +R 2.438R 24.38

*price indicative

Packaging Options:
RS stock no.:
250-0554
Mfr. Part No.:
BSS209PWH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.28A

Maximum Drain Source Voltage Vds

40V

Series

BSS

Package Type

SOT-323

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS-P Small-Signal-Transistor with super logic level of 2.5 V (rated). The operating temperature is 150°C. It is Avalanche and dv /dt rated. It is Pb-free with lead plating, Halogen-free.

VDS is -20 V, RDS(on),max 550 mΩ and Id is -0.63 A

Maximum power dissipation is 500mW

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