Infineon BSS Type P-Channel MOSFET, 0.15 A, 30 V Enhancement, 3-Pin SOT-23 BSS315PH6327XTSA1

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Subtotal (1 pack of 10 units)*

R 35,95

(exc. VAT)

R 41,34

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 3.595R 35.95
20 - 90R 3.505R 35.05
100 - 240R 3.40R 34.00
250 - 490R 3.264R 32.64
500 +R 3.133R 31.33

*price indicative

Packaging Options:
RS stock no.:
250-0558
Mfr. Part No.:
BSS315PH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.15A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

BSS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. The OptiMOS P 2 Small Signal-Transistor. The Logic level 4.5V rated, avalanche rated.

Logic level is 4.5V rated

100% lead-free, and Halogen-free

Maximum power dissipation is 500mW

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