DiodesZetex DMN2004K N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SOT-23 DMN2004K-7
- RS stock no.:
- 708-2425
- Mfr. Part No.:
- DMN2004K-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 124,775
(exc. VAT)
R 143,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,000 unit(s) shipping from 10 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 4.991 | R 124.78 |
| 125 - 225 | R 4.866 | R 121.65 |
| 250 - 475 | R 4.72 | R 118.00 |
| 500 - 1225 | R 4.532 | R 113.30 |
| 1250 + | R 4.35 | R 108.75 |
*price indicative
- RS stock no.:
- 708-2425
- Mfr. Part No.:
- DMN2004K-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMN2004K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Power Dissipation Pd | 350mW | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q104, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMN2004K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Power Dissipation Pd 350mW | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q104, AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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