Infineon BSS Type P-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323

Image representative of range

Bulk discount available

Subtotal (1 reel of 3000 units)*

R 2 193,00

(exc. VAT)

R 2 523,00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 9,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 3000R 0.731R 2,193.00
6000 - 6000R 0.712R 2,136.00
9000 +R 0.691R 2,073.00

*price indicative

RS stock no.:
250-0553
Mfr. Part No.:
BSS209PWH6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

0.28A

Maximum Drain Source Voltage Vds

40V

Series

BSS

Package Type

SOT-323

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS-P Small-Signal-Transistor with super logic level of 2.5 V (rated). The operating temperature is 150°C. It is Avalanche and dv /dt rated. It is Pb-free with lead plating, Halogen-free.

VDS is -20 V, RDS(on),max 550 mΩ and Id is -0.63 A

Maximum power dissipation is 500mW

Related links