P-Channel MOSFET, 200 mA, 20 V, 3-Pin SOT-323 ROHM RU1C002ZPTCL
- RS stock no.:
- 124-6835
- Mfr. Part No.:
- RU1C002ZPTCL
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 pack of 100 units)**
R 99 30
(exc. VAT)
R 114 20
(inc. VAT)
500 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
---|---|---|
100 - 400 | R 0,993 | R 99,30 |
500 - 900 | R 0,968 | R 96,80 |
1000 - 2400 | R 0,939 | R 93,90 |
2500 - 4900 | R 0,902 | R 90,20 |
5000 + | R 0,866 | R 86,60 |
**price indicative
- RS stock no.:
- 124-6835
- Mfr. Part No.:
- RU1C002ZPTCL
- Manufacturer:
- ROHM
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | ROHM | |
Channel Type | P | |
Maximum Continuous Drain Current | 200 mA | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOT-323 | |
Series | RU1C002ZP | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9.6 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Minimum Gate Threshold Voltage | 0.3V | |
Maximum Power Dissipation | 150 mW | |
Maximum Gate Source Voltage | -10 V, +10 V | |
Maximum Operating Temperature | +150 °C | |
Width | 1.35mm | |
Typical Gate Charge @ Vgs | 1.4 nC @ 4.5 V | |
Length | 2.1mm | |
Number of Elements per Chip | 1 | |
Height | 1mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-323 | ||
Series RU1C002ZP | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.6 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 150 mW | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.35mm | ||
Typical Gate Charge @ Vgs 1.4 nC @ 4.5 V | ||
Length 2.1mm | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
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