N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF

RS stock no.:: 688-6923
Mfr. Part No.:: IRFB3607PBF
Manufacturer:: Infineon

N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF

80 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Pack of 5)

R 22,954

(exc. VAT)

R 26,397

(inc. VAT)

Units	Per unit	Per Pack*
5 - 20	R 22,954	R 114,77
25 - 45	R 22,38	R 111,90
50 - 95	R 21,708	R 108,54
100 - 245	R 20,84	R 104,20
250 +	R 20,006	R 100,03

*price indicative

RS stock no.:: 688-6923
Mfr. Part No.:: IRFB3607PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	75 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	140 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.82mm
Transistor Material	Si
Length	10.66mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	56 nC @ 10 V
Height	9.02mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF

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