Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 5 units)*

R 78,89

(exc. VAT)

R 90,725

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 15.778R 78.89
25 - 45R 15.384R 76.92
50 - 95R 14.922R 74.61
100 - 245R 14.326R 71.63
250 +R 13.752R 68.76

*price indicative

RS stock no.:
688-6923
Mfr. Part No.:
IRFB3607PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

4.82 mm

Standards/Approvals

No

Height

9.02mm

Length

10.66mm

Automotive Standard

No

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