Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 51 067,50

(exc. VAT)

R 58 727,50

(inc. VAT)

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  • Shipping from 22 September 2026
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Units
Per unit
Per Reel*
2500 - 2500R 20.427R 51,067.50
5000 - 5000R 19.916R 49,790.00
7500 +R 19.319R 48,297.50

*price indicative

RS stock no.:
244-9739
Mfr. Part No.:
IPD60R145CFD7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

75V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon IPD60R145CFD7ATMA1 600V CoolMOS CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt Ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

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