Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 58 425,00

(exc. VAT)

R 67 200,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 23.37R 58,425.00
5000 - 5000R 22.786R 56,965.00
7500 +R 22.102R 55,255.00

*price indicative

RS stock no.:
244-9739
Mfr. Part No.:
IPD60R145CFD7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

75V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon IPD60R145CFD7ATMA1 600V CoolMOS CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt Ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

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