Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1

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Subtotal (1 pack of 2 units)*

R 106,60

(exc. VAT)

R 122,60

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 53.30R 106.60
10 - 98R 51.97R 103.94
100 - 248R 50.41R 100.82
250 - 498R 48.395R 96.79
500 +R 46.46R 92.92

*price indicative

Packaging Options:
RS stock no.:
244-8544
Mfr. Part No.:
IPD050N10N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

75V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM5 Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.

N-channel, normal level

Excellent gate charge x RDS(on) product (FOM)

Very low on-resistance RDS(on)

175 °C operating temperature

Ideal for high-frequency switching

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