Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSATMA1

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Subtotal (1 reel of 5000 units)*

R 48 115,00

(exc. VAT)

R 55 330,00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 - 5000R 9.623R 48,115.00
10000 - 10000R 9.383R 46,915.00
15000 +R 9.101R 45,505.00

*price indicative

RS stock no.:
241-9696
Mfr. Part No.:
BSZ018NE2LSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Package Type

PQFN

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which has Pb-free lead plating. It is optimized for high performance Buck converter.

Very low on-resistance

Qualified according to JEDEC for target applications

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