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Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSIATMA1

Name: Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSIATMA1
Brand: Infineon
SKU: 241-9699
Availability: InStock

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R 47,03

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R 54,08

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Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	212A
	Maximum Drain Source Voltage Vds	40V
	Series	BSZ
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 212A
	Maximum Drain Source Voltage Vds 40V
	Series BSZ
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which is Optimized for high performance Buck converter. It is 100% avalanche tested.

Monolithic integrated Schottky like diode

Halogen-free according to IEC61249-2-21

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