Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSIATMA1

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Subtotal (1 pack of 2 units)*

R 57,75

(exc. VAT)

R 66,412

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
2 - 8R 28.875R 57.75
10 - 98R 28.155R 56.31
100 - 248R 27.31R 54.62
250 - 498R 26.22R 52.44
500 +R 25.17R 50.34

*price indicative

Packaging Options:
RS stock no.:
241-9699
Mfr. Part No.:
BSZ018NE2LSIATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Package Type

PQFN

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which is Optimized for high performance Buck converter. It is 100% avalanche tested.

Monolithic integrated Schottky like diode

Halogen-free according to IEC61249-2-21

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