Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ024N04LS6ATMA1

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Subtotal (1 pack of 2 units)*

R 57,29

(exc. VAT)

R 65,884

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 28.645R 57.29
10 - 98R 27.93R 55.86
100 - 248R 27.09R 54.18
250 - 498R 26.005R 52.01
500 +R 24.965R 49.93

*price indicative

Packaging Options:
RS stock no.:
241-9703
Mfr. Part No.:
BSZ024N04LS6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Series

BSZ

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS 6 Power transistor is a N channel MOSFET which is optimized for synchronous application. It has Superior thermal resistance.

Halogen-free according to IEC61249-2-21

100% avalanche tested

Qualified according to JEDEC for target applications

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