Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ024N04LS6ATMA1

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Subtotal (1 pack of 2 units)*

R 38,08

(exc. VAT)

R 43,80

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 19.04R 38.08
10 - 98R 18.565R 37.13
100 - 248R 18.01R 36.02
250 - 498R 17.29R 34.58
500 +R 16.60R 33.20

*price indicative

Packaging Options:
RS stock no.:
241-9703
Mfr. Part No.:
BSZ024N04LS6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Series

BSZ

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS 6 Power transistor is a N channel MOSFET which is optimized for synchronous application. It has Superior thermal resistance.

Halogen-free according to IEC61249-2-21

100% avalanche tested

Qualified according to JEDEC for target applications

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